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STGF7NB60SL

ST Microelectronics

N-CHANNEL IGBT

STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESH™ IGBT Table 1: General Features TYPE STGF7NB60SL s s s s s Figure ...


ST Microelectronics

STGF7NB60SL

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STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESH™ IGBT Table 1: General Features TYPE STGF7NB60SL s s s s s Figure 1: Package IC @100°C 40 A VCES 200 V VCE(sat) (Max) @25°C < 0.045 Ω POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 1 2 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER s STATIC RELAYS s Table 2: Order Codes SALES TYPE STGF7NB60SL MARKING GF7NB60SL PACKAGE TO-220FP PACKAGING TUBE Rev. 2 June 2004 1/9 STGF7NB60SL Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM (1) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C. Storage Temperature Operating Junction Temperature Value 600 20 ± 20 15 7 20 25 0.2 2500 – 55 to 150 Symbol V V V A A A W W/°C V °C (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junct...




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