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STGFW20V60F

STMicroelectronics

IGBT

STGFW20V60F, STGW20V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed 3 2 1 TO-247 1 TO...


STMicroelectronics

STGFW20V60F

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STGFW20V60F, STGW20V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3) G1C2TE3 Features Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 20 A Tight parameter distribution Safe paralleling Low thermal resistance Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW20V60F STGW20V60F Product summary Order code STGFW20V60F Marking GFW20V60F Package TO-3PF Packing Tube Order code STGW20V60F Marking GW20V60F Package TO-247 Packing Tube DS9775 - Rev 2 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGFW20V60F, STGW20V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC ...




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