STGP10N60L

® STGP10N60L N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT TYPE STGP10N60L s V CES 600 V V CE(sat ) < 1.95 V IC 10 A s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 1 3 2 APPLICATIONS s ELECTRONIC IGNITION s LIGHT DIMMER s STATIC RELAYS TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 25 ± 15 25 20 100 125 0.83 -65 to 175 175 Un it V V V A A A W W /o C o o C C () Pulse width limited by safe operating area June 1999 1/8 STGP10N60L THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.2 62.5 0.1 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified) OFF Symbo l V BR(c es) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 µ A V GE = 0 T j = 25 oC o T j = 125 C V CE = 0 Min. 600 25 100 ± 100 Typ...