STGWT80H65DFB

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 Features Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW80H65DFB STGWT80H65DFB Product summary Order code STGW80H65DFB Marking GW80H65DFB Package TO-247 Packing Tube Order code STGWT80H65DFB Marking GWT80H65DFB Package TO-3P Packing Tube DS9536 - Rev 9 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW80H65DFB, STGWT80H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0) Continuous collect...