STH12N120K5-2AG

STH12N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package TAB 23 1 H2PAK-2 D(TAB) Features Order code VDS RDS(on) max. ID STH12N120K5-2AG 1200 V 1.9 Ω 7A AEC-Q101 qualified Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested G(1) S(2, 3) Applications Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH12N120K5-2AG Product summary Order code STH12N120K5-2AG Marking 12A120K5 Package H²PAK-2 Packing Tape and reel DS14124 - Rev 1 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STH12N120K5-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current at TC = 25 °C ID Drain current at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 7 A, ...