DatasheetsPDF.com

STH160N4LF6-2 Datasheet

Part Number STH160N4LF6-2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STH160N4LF6-2 DatasheetSTH160N4LF6-2 Datasheet (PDF)

STH160N4LF6-2 N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package Datasheet - production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100% avalanche tested Figure 1. Internal schematic diagram Applications • Switching applications 'Ć 7$% Description *Ć  This d.

  STH160N4LF6-2   STH160N4LF6-2






N-channel Power MOSFET

STH160N4LF6-2 N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package Datasheet - production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100% avalanche tested Figure 1. Internal schematic diagram Applications • Switching applications 'Ć 7$% Description *Ć  This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6Ć Ć $0Y Order code STH160N4LF6-2 Table 1. Device summary Marking Package 160N4LF6 2 H PAK-2 Packaging Tape and reel April 2014 This is information on a product in full production. DocID026265 Rev 1 1/17 www.st.com Contents Contents STH160N4L.


2019-01-21 : HMJ7-1    STH410N4F7-6AG    STV270N4F3    STFI4N62K3    STH260N4LF7-2    GB7NC60HD    STLD200N4F6AG    STI410N4F7AG    STH410N4F7-2AG    STB70NF03L-1   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)