STH185N10F3-2
Automotive-grade N-channel 100 V, 180 A, 3.9 mΩ typ., STripFET™ F3 Power MOSFET in an H²PAK-2 package
Dat...
STH185N10F3-2
Automotive-grade N-channel 100 V, 180 A, 3.9 mΩ typ., STripFET™ F3 Power
MOSFET in an H²PAK-2 package
Datasheet - production data
Features
Order code STH185N10F3-2
VDS 100 V
RDS(on) max. 4.5 mΩ
ID 180 A
Figure 1: Internal schematic diagram D(TAB)
G(1)
AEC-Q101 qualified Ultra low on-resistance 100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power
MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
S(2, 3)
Order code STH185N10F3-2
AM01475v5
Table 1: Device summary
Marking
Packages
185N10F3
H2PAK-2
Packing Tape and reel
October 2016
DocID026910 Rev 3
This is information on a product in full production.
1/15
www.st.com
Contents
Contents
STH185N10F3-2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ...........