STH240N10F7-2, STH240N10F7-6
Datasheet
N-channel 100 V, 2 mΩ typ., 180 A STripFET™ F7 Power MOSFETs in an H²PAK-2 and H²...
STH240N10F7-2, STH240N10F7-6
Datasheet
N-channel 100 V, 2 mΩ typ., 180 A STripFET™ F7 Power
MOSFETs in an H²PAK-2 and H²PAK-6 packages
TAB 23 1
H2 PAK-2
TAB
7 1 H2 PAK-6
Features
Order code
VDS
RDS(on) max.
STH240N10F7-2 STH240N10F7-6
100 V
2.5 mΩ
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
ID 180 A
D(TAB)
D(TAB) Description
G(1)
G(1)
These N-channel Power
MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(2, 3) for
H2PAK-2
S(2, 3, 4, 5, 6, 7)
for H2PAK-6
N-CHG1DTABS23_2_6
Product status
STH240N10F7-2
STH240N10F7-6
Product summary
Order code
STH240N10F7-2
Marking
240N10F7
Package
H²PAK-2
Packing
Tape and reel
Order code
STH240N10F7-6
Marking
240N10F7
Package
H²PAK-6...
