STH260N4LF7-2, STH260N4LF7-6
N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packa...
STH260N4LF7-2, STH260N4LF7-6
N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power
MOSFETs in H2PAK-2 and H2PAK-6 packages
Datasheet − preliminary data
Features
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Order code STH260N4LF7-2 STH260N4LF7-6
VDS 40 V
RDS(on)max ID PTOT 1.6 mΩ 180 A 200 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
These N-channel Power
MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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Order code STH260N4LF7-2 STH260N4LF7-6
Table 1. Device summary
Marking
Package
260N4LF7
H2PAK-2
260N4LF7
H2PAK-6...