STH265N6F6-2AG, STH265N6F6-6AG
Automotive N-channel 60 V, 1.6 mΩ typ., 180 A STripFET™ F6 Power MOSFET in H²PAK-2 and H²...
STH265N6F6-2AG, STH265N6F6-6AG
Automotive N-channel 60 V, 1.6 mΩ typ., 180 A STripFET™ F6 Power
MOSFET in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
TAB TAB
2 3
1
H2PAK-2
7 1
H2PAK-6
Figure 1: Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Features
Order code STH265N6F6-2AG STH265N6F6-6AG
VDS 60 V 60 V
RDS(on) max 2.1 mΩ 2.1 mΩ
ID 180 A 180 A
Designed for automotive applications Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power
MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power
MOSFET exhibits very low RDS(on) in all packages.
S(2, 3) H2PAK-2
Order code STH265N6F6-2AG STH265N6F6-6AG
S(2, 3, 4, 5, 6, 7) H2PAK-6
SC06140_HP2AK-2-6
Table 1: Device summary
Marking
Package
265N6F6
H2PAK-2
265N6F6
H2PAK-6
Packaging Tape and reel Tape and ree...