STH270N8F7-2, STH270N8F7-6, STP270N8F7
Datasheet
N-channel 80 V, 0.0017 Ω typ., 180 A STripFET F7 Power MOSFETs in an H²...
STH270N8F7-2, STH270N8F7-6, STP270N8F7
Datasheet
N-channel 80 V, 0.0017 Ω typ., 180 A STripFET F7 Power
MOSFETs in an H²PAK-2, H²PAK-6 and TO-220 packages
TAB
TAB
2
3
H2
PA
K
1
-2
TAB
7 1
H 2PA K -6
3 12
TO-220
D(TAB)
D(2, TAB)
Features
Order codes
VDS
RDS(on) max.
STH270N8F7-2 STH270N8F7-6
80 V
0.0021 Ω
STP270N8F7
0.0025 Ω
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
ID 180 A
G(1)
G(1)
S(2, 3, 4, 5, 6, 7)
H2PAK-2, H2PAK-6
S(3)
TO-220
H2PAK_2_6_N-CHG1DTABS234567_TO-220_N-CHG1D2TABS3
Applications
Switching applications
Description
These N-channel Power
MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status links STH270N8F7-2 STH270N8F7-6 STP270N8F7
DS9394 - Rev 5 - March 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
STH270N8F7-2, STH270N8F7-6, STP270N8F7
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source
voltage
VGS
Gate-source
voltage
ID (1)
Drain current (continuous) at TC = 25 °C
ID (1)
Drain current (continuous) at Tc = 100 °C
IDM (2)
Drain current (pulsed)
PTOT(3)
Total power dissipation at TC = 25 °C
EAS (4)
Single pulse avalanche energy
Tj
...
