STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
22
Power MOSFET in H PAK-2 and...
STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
22
Power
MOSFET in H PAK-2 and H PAK-6 packages
Datasheet - production data
Features
TAB
2 3
1
H2PAK-2
TAB
1
H2PAK-6
7
Figure 1. Internal schematic diagram
Order codes
VDS RDS(on) max. ID
STH310N10F7-2 100 V
STH310N10F7-6
2.3 mΩ
180 A
Ultra low on-resistance 100% avalanche tested
Applications
Switching applications
Description
th
These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
Order codes STH310N10F7-2 STH310N10F7-6
Table 1. Device summary
Marking
Package
310N10F7
2
H PAK-2
2
H PAK-6
Packaging Tape and reel
July 2013
This is information on a product in full production.
DocID024040 Rev 2
1/19
www.st.com
Contents
Contents
STH310N10F7-2, STH310N10F7-6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . ....