STH315N10F7-6

STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Features Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness ID 180 A G(1) S(2, 3) for H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) for H 2PAK-6 N-CHG1DTABS23_2_6 Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STH315N10F7-2 STH315N10F7-6 Product summary Order code STH315N10F7-2 Marking 315N10F7 Package H²PAK-2 Packing Tape and reel Order code STH315N10F7-6 Marking 315N10F7 Package H²PAK-6 Packing Tape and reel DS9870 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com STH315N10F7-2, STH315N10F7-6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at Tc = 100 °C IDM (2) Drain current (puls...