Features
STH320N4F6-2, STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power M...
Features
STH320N4F6-2, STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power
MOSFET
Datasheet — production data
Order codes STH320N4F6-2 STH320N4F6-6
VDS RDS(on) max
40 V
1.3 mΩ
1. Current limited by package.
■ Standard threshold drive ■ 100% avalanche tested
ID(1) 200 A
Applications
■ Automotive switching applications
TAB
TAB
2 3
1
H2PAK-2
1
H2PAK-6
7
Description
These devices are N-channel Power
MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power
MOSFETs exhibits the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Table 1. Device summary Order codes
STH320N4F6-2 STH320N4F6-6
Marking 320N4F6
S(2, 3)
H2PAK-2
Package H2PAK-2 H2PAK-6
S(2, 3, 4, 5, 6, 7)
H2PAK-6
SC06140_H2PAK-2-6
Packaging Tape and reel
February 2013
This is information on a product in full production.
Doc ID 024221 Rev 1
1/19
www.st.com
19
Contents
Contents
STH320N4F6-2, STH320N4F6-6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical ...
