STFW3N150, STH3N150-2 STP3N150, STW3N150
Datasheet
N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF,...
STFW3N150, STH3N150-2 STP3N150, STW3N150
Datasheet
N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power
MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages
23 1
TO-3PF
TAB
3 2
TO-220 1
D(2, TAB)
TAB 2 3 1
H2PAK-2
3 2 1
TO-247
D(TAB)
G(1)
G(1)
Features
Order codes
VDS
RDS(on) max.
ID
PTOT
STFW3N150
63 W
STH3N150-2
1500 V
9Ω
STP3N150
2.5 A
140 W
STW3N150
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Applications
Switching applications
S(3) (TO-3PF, TO-220 and TO-247)
S(2, 3) (H2PAK-2)
AM15557v1
Description
These Power
MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150
DS5052 - Rev 12 - May 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Parameter
VDS
Drain-source
voltage
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
VISO
Insulation withstand
voltage (RMS) from all three leads to external heat sink (t = 1 s;...