STH80N10LF7-2AG
Datasheet
Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 pac...
STH80N10LF7-2AG
Datasheet
Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power
MOSFET in an H2PAK-2 package
TAB
23 1 H2PAK-2
D(TAB)
Features
Order code STH80N10LF7-2AG
VDS 100 V
RDS(on) max. 10 mΩ
AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
ID 80 A
PTOT 110 W
G(1) S(2, 3)
Applications
Switching applications
DTG1S23NZ
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status link STH80N10LF7-2AG
Product summary
Order code
STH80N10LF7-2AG
Marking
80N10LF7
Package
H²PAK-2
Packing
Tape and reel
DS11708 - Rev 2 - January 2019 For further information contact your local STMicroelectronics sales office.
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