STI10N62K3

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 10N62K3 10N62K3 10N62K3 10N62K3 3 2 1 TO-220FP 1 23 I²PAKFP TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% * 6 AM01476v1 Package TO-220FP I²PAKFP I²PAK TO-220 Packaging Tube September 2012 This is information on a product in full production. Doc ID 15640 Rev 4 1/17 www.st.com 17 Contents Contents STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...