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STI13NM60N Datasheet

Part Number STI13NM60N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL Power MOSFET
Datasheet STI13NM60N DatasheetSTI13NM60N Datasheet (PDF)

STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages TAB Features 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A D(2, TAB) Applications • Switching applications G(1) S(3) NG1.

  STI13NM60N   STI13NM60N






Part Number STI13NM60N
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STI13NM60N DatasheetSTI13NM60N Datasheet (PDF)

Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGSS Drain-Source Voltage Gate-Source Voltage 600 V ±25 V ID .

  STI13NM60N   STI13NM60N







N-CHANNEL Power MOSFET

STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages TAB Features 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A D(2, TAB) Applications • Switching applications G(1) S(3) NG1D2TS3 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STF13NM60N STI13NM60N STP13NM60N STU13NM60N DS6112 - Rev 6 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current pulsed PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all t.


2015-05-06 : 74HC4060    74HCT4060    2SK3681-01    UPD78F0988A    M68HC11    STB30NM60ND    STP30NM60ND    STW30NM60ND    DW3-12S33    DW3-12S05   


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