STF14NM50N, STI14NM50N, STP14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO...
STF14NM50N, STI14NM50N, STP14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power
MOSFETs in TO-220FP, I²PAK and TO-220 packages
Datasheet - production data
Features
3 2 1
TO-220FP
TAB TAB
I2PAK 1 2 3
TO-220
3 2
1
Figure 1. Internal schematic diagram
'7$%
*6
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Order codes
STF14NM50N STI14NM50N STP14NM50N
VDS @ TJmax
RDS(on) max
ID
550 V
0.32 Ω 12 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Description
These devices are N-channel Power
MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Order codes STF14NM50N STI14NM50N STP14NM50N
Table 1. Device summary
Marking
Package
14NM50N
TO-220FP I2PAK TO-220
Packaging Tube
June 2014
This is information on a product in full production.
DocID16832 Rev 7
1/18
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Contents
Contents
STF14NM50N, STI14NM50N, STP14NM50N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . ....