STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N
N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK ...
STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N
N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power
MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
Features
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Type
VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V
RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω
ID
1
3
3 12
STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N
15 A 15 A 15 A (1)
D²PAK
2 1 3
I²PAK
15 A 15 A
3 1 2
TO-247
3 1 2
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
TO-220FP
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power
MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking B16NM50N I16NM50N F16NM50N P16NM50N W16NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube
Order codes STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N
March 2008
Rev 2
1/18
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Contents
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . ...