DatasheetsPDF.com

STI18N65M5 Datasheet

Part Number STI18N65M5
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STI18N65M5 DatasheetSTI18N65M5 Datasheet (PDF)

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB Order code STF18N65M5 STI18N65M5 STP18N65M5 STW18N65M5 ■ ■ ■ ■ VDSS @ TJmax RDS(on) max ID 3 3 12 1 2 TO-220FP 710 V < 0.22 Ω 15 A TAB I²PAK Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1. Internal sch.

  STI18N65M5   STI18N65M5






Part Number STI18N65M5
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STI18N65M5 DatasheetSTI18N65M5 Datasheet (PDF)

Isc N-Channel MOSFET Transistor ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 15 9.4 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation .

  STI18N65M5   STI18N65M5







N-channel Power MOSFET

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB Order code STF18N65M5 STI18N65M5 STP18N65M5 STW18N65M5 ■ ■ ■ ■ VDSS @ TJmax RDS(on) max ID 3 3 12 1 2 TO-220FP 710 V < 0.22 Ω 15 A TAB I²PAK Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1. Internal schematic diagram TO-220 3 1 2 2 1 3 TO-247 Applications ■ Switching applications $ 4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Marking Package TO-220FP I²PAK 18N65M5 STP18N65M5 STW18N65M5 TO-220 TO-247 Tube Packaging ' 3 !-V Order code STF18N65M5 STI18N65M5 July 2012 This is information on a product in full production. Doc ID 022879 Rev 3 1/19 www.st.com 19 http://www.Datasheet4U.com Contents STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


2014-05-08 : AAT11671    LC320EXN-SDP1    LC320EXN-SEA2    LC320EXN-SCA2    LC320EXN-SDA1    BL3209S    K4087LS    CJPF10N60    CJP10N60    PF10N60   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)