STI21NM60ND

STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 Ω , 17 A FDmesh™ II Power MOSFET 2 D PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type www.DataSheet4U.com VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 3 3 1 2 3 1 2 1 STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND 17 A 17 A 17 A(1) 17 A 17 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. I2PAK TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND April 2008 Marking 21NM60ND 21NM60ND 21NM60ND 21NM60ND 21NM60ND Rev 2 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube 1/18 www.st.com 18 Contents STP/F21NM60ND - STB21NM60ND - S...