STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
22
Power MOSFE...
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
22
Power
MOSFET in D PAK, I PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2 3
1
D2PAK
TAB
TAB
123
I2PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS @ TJmax RDS(on) max ID
STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2
650 V
0.19 Ω 18 A
Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected
Applications
Switching applications
G(1) S(3)
AM01476v1
Description
These devices are N-channel Power
MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power
MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2
Table 1. Device summary
Marking
Package
24N60M2
2
D PAK
2
I PAK TO-220
TO-247
Packaging Tape and reel
Tube
February 2014
This is information on a product in full production.
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Contents
Contents
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . ....