STK7002

Semiconductor STK7002 N-Channel Enhancement-Mode MOSFET Description High speed switching application. High density cell design for low RDS(ON). Voltage controlled small signal switch www.DataSheet4U.com High saturation current capability. Features Ordering Information Type NO. STK7002 Marking K702 Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1 1.90 Typ. 2.9±0.1 3 0.4 Typ. 0.2 Min. 2 1.12 Max. 0~0.1 0.38 PIN Connections 1. Gate 2. Source 3. Drain KST-2105-003 0.124 -0.03 +0.05 1 STK7002 Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient www.DataSheet4U.com (Ta=25° C) Symbol VDSS VGS ID IDM PD RthJA T J , T stg Ratings 60 ±20 115 800 200 625 -55~150 Unit V V mA mA mW °C/W °C Operating Junction and Storage temperature range Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage On-state drain current (Ta=25° C) Symbol BVDSS VGS(t h) IDSS IGSS ID(on) Test Condition ID =10µA, VGS =0 ID =0.25mA, VDS =V GS VDS =60V, V GS =0 VDS =0V, VGS =± 20V VDS =7.5V, VGS =10V VGS =5V, ID =0.05A Tc=125¡É VGS =10V, I D =0.5A Tc=125¡É VDS =10V, I D =0.2A VDS =25V, V GS =0, f=1MHz Min. 60 1 500 - Typ. 2.0 1000 3.2 5.8 Max. 2.5 1 ± 100 7.5 13.5 7.5 13.5 50 25 5 20 20 Unit V V µA nA mA Drain-Source on-resistance RDS(ON) 80 - 2.4 4...