Semiconductor
STK7002F
N-Channel Enhancement-Mode MOSFET
Description
• High speed switching application.
Features
• H...
Semiconductor
STK7002F
N-Channel Enhancement-Mode
MOSFET
Description
High speed switching application.
Features
High density cell design for low RDS(ON).
Voltage controlled small signal switch www.DataSheet4U.com High saturation current capability.
Ordering Information
Type NO. STK7002F Marking K702 Package Code SOT-23F
Outline Dimensions
unit : mm
2.3~2.5 1.5~1.7
1
1.90 BSC 2.8~3.0
3 2
0.35~0.45 0.1~0.2
KST-2138-001
0.8~1.0
0~0.1
PIN Connections 1. Gate 2. Source 3. Drain
1
STK7002F
Absolute maximum ratings
Characteristic
Drain-Source
voltage Gate-Source
voltage Maximum Drain current Pulsed Drain Current Power dissipation
www.DataSheet4U.com
(Ta=25°C)
Symbol
VDSS VGS ID IDP * PD RthJA TJ , Tstg
Ratings
60 ±20 115 800 200 625 -55~150
Unit
V V mA mA mW °C/W °C
Maximum Junction-to-Ambient Operating Junction and Storage temperature range
* PW ≤ 10 ㎲, Duty cycle ≤ 1%
Electrical Characteristics
Characteristic
Drain-Source breakdown
voltage Gate-Threshold
voltage Zero Gate
voltage drain current Gate-body leakage Drain-Source on-resistance Forward trans-.conductance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time * PW ≤300 ㎲, Duty cycle ≤1%
(Ta=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) * gfs Ciss Coss Crss tON tOFF
Test Condition
ID=10 ㎲, VGS=0 ID=0.25 ㎃, VDS=VGS VDS=60V, VGS=0 VDS=0V, VGS=±20V VGS=5V, ID=50mA VGS=10V, ID=500mA VDS=10V, ID=0.2A VDS=25V, VGS=0, f=1MHz
Min. Typ. Max.
60 1 80 2.0 3.2 2.4 ...
