STL190N4F7AG
Automotive-grade N-channel 40 V, 1.68 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package...
STL190N4F7AG
Automotive-grade N-channel 40 V, 1.68 mΩ typ., 120 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STL190N4F7AG
VDS 40 V
RDS(on) max 2.00 mΩ
ID 120 A
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package
Applications
Switching applications
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STL190N4F7AG
Table 1: Device summary
Marking
Package
190N4F7
PowerFLAT™ 5x6
Packaging Tape and reel
June 2016
DocID028792 Rev 2
This is information on a product in full p...