STL19N65M5

STL19N65M5 N-channel 650 V, 0.215 Ω typ., 12.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 666 * ' 3RZHU)/$7Œ[Ć+9 Figure 1. Internal schematic diagram ' *6 $0Y Order code STL19N65M5 VDS 710 V RDS(on)max. 0.240 Ω ID (1) 12.5 A 1. The value is rated according to Rthj-case and limited by package. Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance Applications Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Order code STL19N65M5 Table 1. Device summary Marking Package 19N65M5 PowerFLAT™ 8x8 HV Packaging Tape and reel July 2013 This is information on a product in full production. DocID024984 Rev 1 1/17 www.st.com Contents Contents STL19N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . ...