STL200N45LF7

STL200N45LF7 N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL200N45LF7 VDS 45 V RDS(on) max. 1.8 mΩ ID 120 A  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL200N45LF7 Table 1: Device summary Marking Package 200N45F7 PowerFLAT™ 5x6 Packing Tape and reel June 2016 DocID027980 Rev 4 This is information on a product in full production. 1/14 www.st.com Contents Contents STL200N45LF7 1 Electrical ratings .............................