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STL21N65M5
N-channel 650 V, 0.175 Ω , 17 A PowerFLAT™ (8x8) HV ultra low gate charge MDmesh™ V Power MOSFET
Features
Type STL21N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.190 Ω ID 17 A (1)
' $ 3 3 3
"OTTOM VIEW
1. The value is rated according to Rthj-case ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
0OWER&,!4X (6
Application
Switching applications
Description
The device is a N-channel MDmesh™ V Power MOSFET .
N-channel Power MOSFET
www.DataSheet.co.kr
STL21N65M5
N-channel 650 V, 0.175 Ω , 17 A PowerFLAT™ (8x8) HV ultra low gate charge MDmesh™ V Power MOSFET
Features
Type STL21N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.190 Ω ID 17 A (1)
' $ 3 3 3
"OTTOM VIEW
1. The value is rated according to Rthj-case ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
0OWER&,!4X (6
Application
Switching applications
Description
The device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Figure 1.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Marking 21N65M5 Package PowerFLAT™ (8x8) HV Packaging Tape and reel
Order code STL21N65M5
May 2011
Doc ID 17438 Rev 4
1/14
www.st.com 14
Datasheet pdf - http://www.DataSheet4U.net/
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Contents
STL21N65M5
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ... 6
3 .