STL220NS6F7

STL220NS6F7 N-channel 60 V, 1.4 mΩ typ., 250 A STripFET™ F7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 packageDatasheet - preliminary data Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Features Order code STL220NS6F7 VDS 60 V RDS(on) max 1.6 mΩ ID 250 A  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Embedded Schottky diode  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL220NS6F7 Table 1: Device summary Marking 220NS6F7 Package PowerFLATTM 5x6 Packaging Tape and reel August 2015 DocID028256 Rev 1 This is preliminary information on a...