STL22N65M5

STL22N65M5 Datasheet N-channel 650 V, 180 mΩ typ., 15 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 1 PowerFLAT 8x8 HV Drain(5) Gate(1) Driver source(2) Type A Power source(3, 4) D(5) G(1) Type C S(2,3,4) NG1DS2PS34D5_DBL Features Order code VDS @ TJmax RDS(on) max. ID STL22N65M5 710 V 210 mΩ 15 A Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Applications Switching applications Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link STL22N65M5 Product summary Order code STL22N65M5 Marking 22N65M5 Package PowerFLAT 8x8 HV Packing Tape and reel DS9209 - Rev 4 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width is limited b...