STL23NM60ND

www.DataSheet4U.com STL23NM60ND N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) PowerFLAT™ (8x8) HV Preliminary data Features Type STL23NM60ND VDSS (@Tjmax) 650 V RDS(on) max < 0.180 Ω ID 19.5 A(1) ' $ 3 3 3 "OTTOMVIEW 1. This value is rated according to Rthj-case. ■ ■ ■ ■ ■ The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities Figure 1. 0OWER&,!4˜X (6 Application ■ Internal schematic diagram Switching applications $ Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ' 3 !-V Table 1. Device summary Order code Marking 23NM60ND Package PowerFLAT™ 8x8 HV Packaging Tape and reel STL23NM60ND April 2010 Doc ID 17439 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STL23NM60ND Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . ...