www.DataSheet.co.kr
STL26NM60N
N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power...
www.DataSheet.co.kr
STL26NM60N
N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power
MOSFET
Features
Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1)
' $ 3 3 3
"OTTOM VIEW
1. The value is rated according to Rthj-case ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
0OWER&,!4 X (6
Applications
■
Switching applications Figure 1. Internal schematic diagram
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power
MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
$
'
3
!-V
Table 1.
Device summary
Marking 26NM60N Package PowerFLAT™ 8x8 HV Packaging Tape and reel
Order code STL26NM60N
November 2011
Doc ID 18472 Rev 2
1/14
www.st.com 14
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Contents
STL26NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ..........................