STL36DN6F7
Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package
Da...
STL36DN6F7
Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 5x6 double island package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STL36DN6F7
VDS 60 V
RDS(on) max 27 mΩ
ID 33 A
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This dual N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STL36DN6F7
Marking 36DN6F7
Table 1: Device summary Package
PowerFLAT™ 5x6 double island
Packing Tape and reel
May 2017
DocID028259 Rev 3
This is information on a product in full production.
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Contents
Contents
STL36DN6F7
1 Electrical ratings ..........
