STL3N10F7
N-channel 100 V, 0.062 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet...
STL3N10F7
N-channel 100 V, 0.062 Ω typ., 4 A STripFET™ VII DeepGATE™ Power
MOSFET in a PowerFLAT™ 2x2 package
Datasheet - production data
Features
1 2 3
1 2 3
6 5 4
PowerFLAT™ 2x2
Order code STL3N10F7
VDS 100 V
RDS(on) max 0.07 Ω
N-channel enhancement mode Low gate charge 100% avalanche rated
ID 4A
Applications
Switching applications
Figure 1. Internal schematic diagram
1(D) 2(D) 3(G)
DS
Description
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This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
6(D) 5(D) 4(S) Bottom view
AM11269v1
Order code STL3N10F7
Table 1. Device summary
Marking
Packages
ST3N
PowerFLAT™ 2x2
Packaging Tape and reel
April 2014
This is information on a product in full production.
DocID025948 Rev 2
1/13
www.st.com
Contents
Contents
STL3N10F7
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . ....
