STL3NM60N
Datasheet
N-channel 600 V, 1.5 Ω typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package
123 4
876 5
567 8
PowerFLAT 3.3x3.3 HV
D(5, 6, 7, 8)
G(4) S(1, 2, 3)
AM15810v1
Features
Order code
VDS
RDS(on ) max.
STL3NM60N
600 V
1.8 Ω
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
ID 2.2 A
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation o.
N-channel Power MOSFET
STL3NM60N
Datasheet
N-channel 600 V, 1.5 Ω typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package
123 4
876 5
567 8
PowerFLAT 3.3x3.3 HV
D(5, 6, 7, 8)
G(4) S(1, 2, 3)
AM15810v1
Features
Order code
VDS
RDS(on ) max.
STL3NM60N
600 V
1.8 Ω
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
ID 2.2 A
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Product status link STL3NM60N
Product summary
Order code
STL3NM60N
Marking
3NM60
Package
PowerFLAT 3.3x3.3 HV
Packing
Tape and reel
DS8889 - Rev 3 - May 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STL3NM60N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C ID
Drain current (continuous) at TA = 25 °C Drain current (continuous) at TA = 100 °C
IDM (1)
Drain current pulsed
PTOT
Total power dissipation at TA = 25 °C Total power dissipation at TC = 25 °C
IAS
Avalanche current, repetitive or no.