STL40C30H3LL
N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET™ VI Power MOSFET in a PowerF...
STL40C30H3LL
N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET™ VI Power
MOSFET in a PowerFLAT 5x6 d. i. package
Datasheet - production data
Features
1 2 3 4
PowerFLAT™5x6 double island
Figure 1. Internal schematic diagram
Order code Channel VDS RDS(on) max ID
N STL40C30H3LL
P
0.021 Ω @ 10 V 10 A
30 V 0.03 Ω @ 10 V 8 A
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
Applications
Switching applications
Description
This device is a complementary N-channel and Pchannel Power
MOSFET developed using STripFET™ V (P-channel) and STripFET™ VI DeepGATE™ (N-channel) technologies. The resulting device exhibits low on-state resistance and an FOM among the lowest in its
voltage class.
AM00623v2
Order code
Table 1. Device summary
Marking
Packages
Packaging
STL40C30H3LL
40C30H3L
PowerFLAT 5x6 double island
Tape and reel
Note:
For the P-channel M...
