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STL51007X

Siemens Semiconductor

1300 nm Laser in Receptacle Package

www.DataSheet4U.com 1300 nm Laser in Receptacle Package, Low Power STL 51007X • • • • Designed for application in fi...


Siemens Semiconductor

STL51007X

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www.DataSheet4U.com 1300 nm Laser in Receptacle Package, Low Power STL 51007X Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power Hermetically sealed subcomponents, similar to TO 18 SM Receptacle with 2- hole flange Type STL 51007G Ordering Code Q62702-P3004 Connector/Flange FC, 2-hole Maximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Laser Diode Direct forward current Radiant power CW Reverse voltage Monitor Diode Reverse voltage Symbol Values Unit TC Tstg TS − 40 … + 85 − 40 … + 85 260 °C °C °C IF max Φe 120 1 2 mA mW V VR max VR max 10 V Semiconductor Group 1 02.95 STL 51007X Characteristics All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C. Parameter Laser Diode Optical output power Emission wavelength center of range Φe = 0.2 mW Spectral bandwidth Φe = 0.2 mW (RMS) Threshold current (− 40 … + 85 °C) Forward voltage Φe = 0.2 mW Radiant power at threshold Slope efficiency Differential series resistance Rise time/fall time Monitor Diode Dark current, VR = 5 V, Φe = 0 Photocurrent, Φe = 0.2 mW Φe λ ∆λ > 0.4 1280 … 1330 <5 ...




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