STL52DN4LF7AG
Automotive-grade dual N-channel 40 V, 9 mΩ typ., 18 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI
Da...
STL52DN4LF7AG
Automotive-grade dual N-channel 40 V, 9 mΩ typ., 18 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 5x6 DI
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STL52DN4LF7AG
VDS 40 V
RDS(on) max. 16 mΩ
ID 18 A
AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package
Applications
Switching applications
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STL52DN4LF7AG
Table 1: Device summary
Marking
Package
52DN4LF7
PowerFLAT™ 5x6 double island
December 2017
DocID029278 Rev 4
This is information on a product in full production.
Packing Tape and reel
1/16
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