STL6N3LLH6

STL6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet — preliminary data Features Order code VDSS RDS(on) max. ID PTOT 1 2 3 STL6N3LLH6 30 V ■ ■ ■ ■ ■ 0.025 Ω (VGS=10 V) 6 A 2.4W 0.04 Ω (VGS=4.5 V) 1 2 3 6 5 4 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ 2x2 Applications ■ Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Switching application Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D S 6(D) 5(D) 4(S) AM11269v1 Table 1. Device summary Marking STG1 Package PowerFLAT™ 2x2 Packaging Tape and reel Order code STL6N3LLH6 October 2012 Doc ID 023231 Rev 2 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Free Datasheet http://www.datasheet4u.com/ Contents STL6N3LLH6 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............