STL6P3LLH6

STL6P3LLH6 Datasheet P-channel 30 V, 24 mΩ typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS STL6P3LLH6 30 V Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss RDS(on) max. 30 mΩ ID 6A PTOT 2.9 W Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM01475v4 Product status link STL6P3LLH6 Product summary Order code STL6P3LLH6 Marking Package Packing 6P3L PowerFLAT 3.3 x 3.3 Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS9257 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com STL6P3LLH6 Electrical ratings 1 Note: Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(1)(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature TJ Max. operating junction temperature 1. The value is rated according Rthj-pcb. 2. Pulse width limited by safe operating area. Value 30 ±20 6 3.8 24 2.9 - 55 to 150 150 Unit V V A A A W °C ...