STL70N10F3

STL70N10F3 N-channel 100 V, 0.0078 Ω, 16 A STripFET™ III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS STL70N10F3 100 V RDS(on) max @VGS=10V 0.0084 Ω ID PTOT 16 A 136 W ■ Improved die-to-footprint ratio ■ Very low thermal resistance ■ Low on-resistance Applications ■ Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram    $$$$ Table 1. Device summary Order code STL70N10F3 Marking 70N10F3 '333   "OTTOM6IEW Package PowerFLAT™ 5x6   4OP6IEW !-6 Packaging Tape and reel May 2012 This is information on a product in full production. Doc ID 018794 Rev 3 1/17 www.st.com 17 Contents Contents STL70N10F3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical d...