STL80N3LLH6

STL80N3LLH6 N-channel 30 V, 0.0042 Ω , 21 A PowerFLAT™(5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Features Type STL80N3LLH6 VDSS 30 V RDS(on) max 0.005 Ω ID 21 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 5x6 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. www.DataSheet4U.com Table 1. Device summary Marking 80N3LLH6 Package PowerFLAT™ (5x6) Packaging Tape and reel Order code STL80N3LLH6 November 2009 Doc ID 16773 Rev 1 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STL80N3LLH6 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . ...