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STL85N6F3
N-channel 60 V, 0.005 Ω, 19 A PowerFLAT™ (6x5) STripFET™ Power MOSFET
Preliminary Data
Features
Type STL85N6F3 VDSS 60 V RDS(on) max < 0.0057 Ω ID 19 A (1)
1. The value is rated according Rthj-pcb ■ ■
Extremely low on-resistance RDS(on) 100% avalanche tested
PowerFLAT™ (6x5)
Application
■
Switching applications
Description
This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based proc.
Power MOSFET
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STL85N6F3
N-channel 60 V, 0.005 Ω, 19 A PowerFLAT™ (6x5) STripFET™ Power MOSFET
Preliminary Data
Features
Type STL85N6F3 VDSS 60 V RDS(on) max < 0.0057 Ω ID 19 A (1)
1. The value is rated according Rthj-pcb ■ ■
Extremely low on-resistance RDS(on) 100% avalanche tested
PowerFLAT™ (6x5)
Application
■
Switching applications
Description
This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 85N6F3 Package PowerFLAT™ (6x5) Packaging Tape and reel
Order code STL85N6F3
January 2009
Rev 1
1/10
www.st.com 10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
STL85N6F3
Contents
1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ... 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .