STL8DN6LF6AG

STL8DN6LF6AG Datasheet Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 DI package Features Order code STL8DN6LF6AG VDS 60 V RDS(on) max. 27 mΩ ID 32 A 4 3 2 1 PowerFLAT 5x6 double island D1(7, 8) D2(5, 6) AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wettable flank package PTOT 55 W G1(2) G2(4) Applications Switching applications Description S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL8DN6LF6AG Product summary Order code STL8DN6LF6AG Marking 8DN6LF6 Package PowerFLAT 5x6 double island Packing Tape and reel DS11120 - Rev 5 - July 2021 For further information contact your local STMicroelectronics sales office. www.st.com STL8DN6LF6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C Drain current (continuous) at TB = 25 °C ID(1) Drain current (continuous) at TB = 100 °C IDM(1)(2) Drain current (pulsed) IDM(2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C (one channel active) Total power dissipation at TB = 25 °C (one chann...