STL8N65M2

STL8N65M2 Datasheet N-channel 650 V, 1 Ω typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Features 1 2 3 4 PowerFLAT 5x6 HV Order code VDS RDS(on ) max. ID STL8N65M2 650 V 1.25 Ω 4A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected D(5, 6, 7, 8) 8 76 5 Applications Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v1 This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STL8N65M2 Product summary Order code STL8N65M2 Marking 8N65M2 Package PowerFLAT 5x6 HV Packing Tape and reel DS13016 - Rev 1 - May 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM Drain current pulsed PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tj O...