STL8P4LLF6
P-channel 40 V, 0.0175 Ω typ.,8 A, STripFET™ F6 Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - p...
STL8P4LLF6
P-channel 40 V, 0.0175 Ω typ.,8 A, STripFET™ F6 Power
MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - production data
1 2 3 4
PowerFLAT™ 3.3x3.3 Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power
MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power
MOSFET exhibits very low RDS(on) in all packages.
For the P-channel Power
MOSFET, current polarity of
voltages and current have to be reversed.
Order code STL8P4LLF6
Marking 8P4F6
Table 1: Device summary Package
PowerFLAT™ 3.3 x 3.3
Packaging Tape and reel
March 2015
DocID025617 Rev 2
This is information on a product in full production.
1/14
www.st.com
Contents
Contents
STL8P4LLF6
1 El...
