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STL9N3LLH5
N-channel 30 V, 0.015 Ω , 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET
Features
Type STL9N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 9 A (1)
1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
PowerFLAT™(3.3x3.3) (Chip scale package)
Applications
■
Switching applications
Figure 1.
Internal schematic diagr.
Power MOSFET
www.DataSheet4U.com
STL9N3LLH5
N-channel 30 V, 0.015 Ω , 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET
Features
Type STL9N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 9 A (1)
1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
PowerFLAT™(3.3x3.3) (Chip scale package)
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.
Table 1.
Device summary
Order code STL9N3LLH5 Marking 9N3L Package PowerFLAT™ (3.3x3.3) Packaging Tape and reel
July 2009
Doc ID 16012 Rev 1
1/12
www.st.com 12
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Contents
STL9N3LLH5
Contents
1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..