STL9NK30Z
N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT™ Zener-Protected SuperMESH™Power MOSFET
TYPE STL9NK30Z
s s s s s s s
VD...
STL9NK30Z
N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT™ Zener-Protected SuperMESH™Power
MOSFET
TYPE STL9NK30Z
s s s s s s s
VDSS 300 V
RDS(on) < 0.4 Ω
ID (1) 9A
Pw (1) 75 W
TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
PowerFLAT™(5x5) (Chip Scale Package)
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high
voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS LIGHTING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
s
ORDERING INFORMATION
SALES TYPE STL9NK30Z MARKING L9NK30Z PACKAGE PowerFLAT™ (5x5) PACKAGING TAPE & REEL
August 2002
1/8
STL9NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID (2) IDM (2) PTOT (2) PTOT (1) VESD(G-S) dv/dt (4) Tstg Tj Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C (Steady State) Total Dissipation at TC = 25°C (Steady State) Derating Factor (2) Gate source ESD(HBM-C=100pF, R...