STL9P3LLH6
Datasheet
P-channel -30 V, 12 mΩ typ., -9 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package
D(5, 6...
STL9P3LLH6
Datasheet
P-channel -30 V, 12 mΩ typ., -9 A STripFET™ H6 Power
MOSFET in a PowerFLAT™ 3.3x3.3 package
D(5, 6, 7, 8) G(4)
S(1, 2, 3)
Features
Order code
VDS
STL9P3LLH6
-30 V
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
RDS(on) max 15 mΩ
ID -9 A
Applications
Switching applications
Description
This device is a P-channel Power
MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power
MOSFET exhibits very low RDS(on) in all packages.
AM01475v4
Product status STL9P3LLH6
Product summary
Order code
STL9P3LLH6
Marking
9P3L
Package
PowerFLAT™ 3.3x3.3
Packing
Tape and reel
DS10145 - Rev 3 - February 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source
voltage
VGS Gate-source
voltage
ID Drain current (co...
